http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-410479-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_508e7d633e9f849b09bd13b1e3b5f89c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7808 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 1999-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b54d9de288dbe594f057edf3f2a2597 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da80ab093f84dbe8d6e189d355098b99 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_830de0bb97dd4f6ab9630dda73b677f0 |
| publicationDate | 2000-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-410479-B |
| titleOfInvention | Trench-gated power MOSFET with protective diode |
| abstract | A power MOSFET includes a trenched gate which defines a plurality of MOSFET cells. A protective diffusion is created, preferably in an inactive cell, so as to form a diode that is connected in parallel with the channel region in each of the MOSFET cells. The protective diffusion, which replaces the deep centreal diffusion taught in U.S. Patent No. 5,072,266, prevents impact ionization and the resulting generation of carriers near the corners of the gate trench, which can damage or rupture the gate oxide layer. Moreover, the diode can be designed to have a breakdown voltage which limits the strength of the electric field across the gate oxide layer. The elimination of a deep central diffusion permits an increase in cell density and improves the on-resistance of the MOSFET. Specifications for a number of commercially acceptable devices are given. |
| priorityDate | 1997-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.