http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-410432-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1999-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dfce7a0650570c72018819595023d6d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fe33f7fbb46bb9f612c76dd63259caf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0efe8b09c3e92e655d4ea2c0edbc4242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce960eddc3bf2968611bdb2c8a10df71 |
| publicationDate | 2000-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-410432-B |
| titleOfInvention | Method for forming bonding pad |
| abstract | A method for forming a bonding pad is provided. The method includes forming a first metal layer on a semiconductor substrate with integrated circuits. A second metal layer is formed on the first metal layer, wherein the second metal layer includes only one kind of metal material. An anti-reflective layer is formed on the second metal layer. A dielectric layer for protecting is formed on the anti-reflective layer. Finally, the dielectric layer and the anti-reflective layer are defined by mask for being etched off so as to form an etching opening for forming metal interconnect, whereby the corrosion of the first metal layer is reduced by the protection of the second metal layer. |
| priorityDate | 1999-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.