http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-410390-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1999-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3f83e55592f3d13406b9519a4fe28d0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7010f6495c9f759c15067fb83a51dbc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1b6b6a8da89264544cf5c742f0f4e01 |
| publicationDate | 2000-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-410390-B |
| titleOfInvention | Improvement of photolithography error after chemical mechanical polishing |
| abstract | A method of improving photolithography error after chemical mechanical polishing due to difference between pattern density is disclosed. A wafer includes an inner portion and a fringe portion. A first dielectric layer and a photoresist layer are successively formed on the wafer. A first exposure step is performed on the photoresist layer by a photo mask. A second exposure step is then performed on the fringe portion of the photoresist. The photoresist having a pattern is formed by photolithography. The photoresist is used as an etching mask to etch the first dielectric layer such that a first opening is formed and the fringe portion of the first dielectric layer is also removed. A second dielectric layer is then formed on the first dielectric layer and patterned by photolithography. A second opening is formed within the inner portion of the second dielectric layer. |
| priorityDate | 1999-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23989 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579152 |
Total number of triples: 19.