http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-409366-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d8f8e53f5fab1608fc8de3f154775d0a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 |
| filingDate | 1998-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e82e0f899b7aa36241cdfb4a70ac6b82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_757d2829ca276d600c747d9d334d5980 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2e30a3a473805cb2ad1599d0c09391e |
| publicationDate | 2000-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-409366-B |
| titleOfInvention | Ferroelectric memory cell and method of making the same |
| abstract | A method of forming a semi-conductor structure forming, on a prepared substrate, a ferroelecuic memory (FEM) gate unit. A gate junction region is formed between the source junction region and the drain junction region for the FEM gate unit on a FEM gate unit device area, which FEM gate unit includes a lower metal layer, a ferroelectric (FE) layer, and an upper metal layer, and which is formed on a conductive channel precursor. The structure of the semiconductor includes a substrate, which may be either bulk silicon or SOI-type silicon, conductive channels of first and second type formed above the substrate, an FEM gate unit formed above a channel region, wherein the FEM gate unit includes a lower metal layer, an FE layer, and an upper metal layer, and wherein a conductive channel of a second type is formed under the FEM gate unit. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111081761-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111081761-B |
| priorityDate | 1997-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.