http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-406428-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_628db03ba4f8948ecd211fb3d46b9ef4 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14 |
| filingDate | 1999-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc1ffad6898ee6211781b189809c9d66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74331696ef73056b60b7887cb10c420e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf723bc525e8b3b445803014811e6d6d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c183f4ffa4fd7f01d2c47aa7da3b9c66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3097599da76dd151e56b35f486f9e7f |
| publicationDate | 2000-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-406428-B |
| titleOfInvention | Low-noise far infrared HgCdTe light detector and the manufacture method thereof |
| abstract | Low-noise far infrared HgCdTe light detector having the double coating stacked structure containing a photo-enhanced native oxide used for one HgCdTe substrate; the manufacture method comprises in using the direct photo-chemical vapor oxidation method to form a photo-enhanced native oxide on the HgCdTe substrate, and form a zinc sulfide layer on said native oxide; then, defining the pattern on the zinc sulfide layer and the native oxide, and form an electric-conductive film on its upper region to constitute a far-infrared light detector. |
| priorityDate | 1999-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.