http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-405243-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7317808024e524eea40a6c5a5ad6a22 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1998-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0255806158b410de7cf90cf7405fad9 |
| publicationDate | 2000-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-405243-B |
| titleOfInvention | Semiconductor device comprising a mos transistor |
| abstract | In the manufacture of integrated circuits, damage to transistors caused by ESD is customarily precluded by connecting the gates of the transistors, in an early stage, to a protection diode. If for example during plasma etching or reactive ion etching, an electric charge is stored on a floating gate, this charge can be removed via the diode before electric breakdown occurs. In a first embodiment of a device in accordance with the invention, the diode is formed in an active region covered by an electrically insulating layer 12. The gate 8 or a poly track 9 connected thereto projects above this layer and covers only a part of the active region. In the uncovered part of the active region, a cathode or anode is provided so as to be self-aligned relative to the poly track. In another embodiment, the poly track 9 is situated directly next to the region of the diode. The poly track 9 and the surface zone 10 of the protection diode are interconnected by an overlapping metal contact 15. The diode can be manufactured by means of the same process steps as those necessary to manufacture the transistor. In addition, the surface area occupied by the diode can be kept very small. |
| priorityDate | 1998-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.