http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-404073-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e11f22bb42bad909a5c8ff957f997b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bfd5c04928d323c3789a2fcf9a62aa21 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0304 |
| filingDate | 1995-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c1888eb0ee89684d9f5e7a576042cd3 |
| publicationDate | 2000-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-404073-B |
| titleOfInvention | The method of growing Gallium nitride series semiconductor and the apparatus thereof |
| abstract | This invention provides a method of growing Gallium nitride series semiconductor and the apparatus thereof, such as Indium nitride, Gallium nitride, Aluminum nitride and their compound, and the apparatus thereof. The method is to produce the nitrogen atom of low energy with plasma to emit towards the substrate at a close proximity distance. Other reactive gas and doping gas, such as tri-methyl Gallium (TMGa), tri-methyl Indium (TMIn), tri-methyl Aluminum (TMAl), di-ethyl zinc (DEZn), di-cyclopentadiene Magnesium (CP2Mg), silane (SiH4) and other similar metalorganic and hydride gas, are injected by a circular gas injector between the substrate and nitrogen atom source, so as to grow the large area of epitaxial layer with a high growing rate. |
| priorityDate | 1995-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.