http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-404023-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 1999-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efa71a5e9fd109bdd8b7f2e0cfca8c02 |
| publicationDate | 2000-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-404023-B |
| titleOfInvention | The method of forming an improved crown shape DRAM capacitor structure |
| abstract | This invention discloses a process of establishing the improved crown shape storage electrode of the DRAM capacitor structure, which is characterized in adding a silicon hill in the conventional crown shape structure to increase the surface area. A thin, narrow insulated pattern is formed on two wider and thicker insulated pattern. After depositing the poly-silicon layer, utilize the chemical-mechanical polishing step to remove the poly-silicon on the surface of the two wider and thicker insulated pattern; form the improved crown shape storage electrode; however, the poly-silicon layer strided on the thin, narrow insulated pattern is not being removed. Thin, narrow insulated pattern is pre-formed in the anisotropical reactive ion etch step, and the etch process uses a photoresist pattern as the etch mask, and its width and thickness are both smaller than another similar photoresist pattern used as the defining etch mask of the two wider and thicker insulated pattern. |
| priorityDate | 1999-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 63.