http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-402751-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5ad8a37a24718df64d141eb0dd1a0372 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
filingDate | 1998-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2000-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b72a5105ef515e4fca7de30603431b02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa43f06476b3635fca215a98dbeffbda http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0480f14fbbbadd921e9e0362d1d8f52 |
publicationDate | 2000-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-402751-B |
titleOfInvention | A method for enlarging the area of the rugged surface on the surface of the semiconductor wafer |
abstract | A method for enlarging the area of the rugged surface on the surface of the semiconductor wafer exterior is provided. The said rugged surface is used as the under-stratum storage node of a capacitor. The said rugged surface contains hemi-spherical grains formed by polysilicon, and the base of the said rugged surface is amorphous silicon. The method of this invention comprises the following steps: (1) form a P-doped silicon-oxide on the said rugged surface; the said silicon-oxide is thinner at the top surface of hemi-spherical grains but thicker at the bottom peripheral of the grains; (2) remove the silicon-oxide to increase the area of the said rugged surface. After the said P-doped silicon-oxide is treated with high temperature thermal process, the phosphorus atom of the said P-doped silicon-oxide will diffuse into the rugged surface to improve the depletion of the said capacitor and enhance the capacitance effectively. |
priorityDate | 1998-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.