http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-400556-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 1998-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb501658c81774b6ba20b61cf8562485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_596230023fdcebcd2b0b14c5ded3489f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b74d3a7926aabebd83a25036c093075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6dff269d1f2451e8c9b5ba2c604e35b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19ae921c643282c7d779a30c9ba80d0b |
| publicationDate | 2000-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-400556-B |
| titleOfInvention | Composition for a wiring, a wiring using the composition, a manufacturing method thereof, a display using the wiring and a manufacturing method thereof |
| abstract | The Mo or MoW composition layer has the low resistivity less than 15 <mu><OMEGA>cm and is etched to have a smooth taper angle using an Al alloy etchant or a Cr etchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor device along with an Al layer and a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using a polymer layer, an etch gas system CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas SF6+HCI (+He) or SF6+CI2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched by using the Mo or MoW layer as a mask, to use an etch gas system such as hydrogen halide and at least one selected from CF4, CHF3, CHCIF2, CH3F and C2F5 yield the good characteristics of TFT, and H2 plasma treatment can cause the characteristics of the TFT to be improved. |
| priorityDate | 1997-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.