| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bb5fe83ca252d1ac7e3c4910539672c8 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-54 |
| filingDate |
1996-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2000-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecd726590a9fe0e587df681057ba6708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abf10cd6eab47926ae6670606a41d306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b39596e3c0b915e6fcf4224c5dbad31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5269dd8abc16ab76e8cf405579fbe5bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cdc67c10c67e7c5b7a76c9391a7dfd5 |
| publicationDate |
2000-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-400462-B |
| titleOfInvention |
The manufacture method of phase-shifting mask |
| abstract |
A second light transmit portion 4 of a phase shift mask 200 is formed of a molybdenum silicide nitride oxide, or a molybdenum silicide nitride oxide film 4 converting a phase of transmitted exposure light by 180 DEG and having the transmittance of at least 2% and less than 5%. In the manufacturing method of the second light transmit portion 4, a molybdenum silicide nitride oxide film, or a molybdenum silicide oxide film is formed by a sputtering method. By comparing the descend conventional photomask with the transmission rate of 5~40%, the phase shifting photomask could increase the power of resolving image and meanwhile to avoid the damage in the image of the photo resist film created by the wave section which is next to the peripheral of the photo resist pattern. |
| priorityDate |
1995-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |