http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-399346-B

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_628db03ba4f8948ecd211fb3d46b9ef4
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
filingDate 1996-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2000-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_440083d2b18d63814ab6466b742d24f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b865c30d4e6898615ec1b68d6e534b07
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publicationDate 2000-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-399346-B
titleOfInvention The method of region selective growth of diamond film
abstract The method of region selective growth of diamond film consists of forming a pre-determined pattern on the silicone base plate using a shield. This shield is used as a mask and gives the growth position of the diamond on the unmasked silicone base plate. After the shielding is deprived, the combination of CxHy (or CxHyOz) and CO2 is used as the raw gas. After the first growth stage of diamond film, the silicone base plate is immersed into the solution containing HF and HNO3 to deprive the diamond core of undeserved growth region. Finally, growing continuous diamond film pattern is applied onto the second stage.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9891030-B1
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priorityDate 1996-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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