http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-399287-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dede050f1c166f825823b3577b581335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5ad8a37a24718df64d141eb0dd1a0372 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0423110295cd3e75e7be422e217d057a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-038 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1998-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25463edb856328d0fc3451041808777b |
| publicationDate | 2000-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-399287-B |
| titleOfInvention | Structure of bottle-shaped deep trench and its manufacturing method |
| abstract | There is disclosed a bottle-shaped deep trench method, which is suitable for the substrate with a pad structure. The method forms a trench deep into the substrate at a predetermined position. First, a first insulated layer is formed to cover the surface of the pad structure. Second, the first insulated layer is etched onto a predetermined depth of the trench trough so as to leave the bottom insulated layer in the trench. Then, one pad oxidation layer is grown at the substrate sidewall on the upper region of the bottom insulated layer. Then, a second insulated layer is formed to cover the pad the surface of the oxidation layer, the pad layer structure and the bottom insulated layer. Then, the second insulated layer is etched to forms an insulated spacer at the pad layer structure inside the trench and the pad oxidation layer. Subsequently, the bottom insulated layer is removed. A bottled-shaped oxide layer is grown at the sidewall of the substrate, which is exposed on the down region of the wall of the insulated gap. The interface of the bottle-shaped oxidation layer and the sidewall of the substrate is expanded outside the trench. Then, the insulated spacer, the pad oxidation layer and the bottle-shaped oxide layer are removed, thereby forming the bottle-shaped deep trench. |
| priorityDate | 1998-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.