http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-396584-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-60 |
| filingDate | 1997-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b466685f1fec45bd29743f97477ea17b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a91da34c0ac33da7a1eca0850eea2583 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7a852a4590c9729d4887d6f3fc6ed08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1be489cc112f5bfa55095f184d3cc96e |
| publicationDate | 2000-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-396584-B |
| titleOfInvention | The producing method of the electrostatic discharge protective circuit in IC |
| abstract | This is a production method of the electrostatic discharge protective circuit in IC. The field effect transistor's gate oxide layer, gate plate, source plate, and butted drain are formed on the P semiconductor's substrate board. A layer of dielectric layer covers the whole semiconductor substrate board's surface. Than, a contact is opened on the top of N+ drain plate to implant the P+ dopant into the contacts opening drain plate of semiconductor substrate board contacts. It completes a N+/P+/N+ serious connection diode butted drain. It finally becomes a metal connecting line. This invention only implants the P+ dopant onto the smaller dimension contacts opening, mean. It not only decreases the protection circuit's collapse voltage to 2 volt, but also reduces this electrostatic discharge protection circuit's electric currency leakage while it is in static status and the capacitance contacts. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8188603-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7915161-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8482127-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7923366-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8435883-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7919865-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8461686-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492900-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8004088-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7892965-B2 |
| priorityDate | 1997-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.