http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-396519-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1998-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59fa845af974c6ae73dfe0ed73130894 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2aba662180854af2b3e7435a2336fb84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_465c6991e84bc2bae27d05ce899efd1d |
| publicationDate | 2000-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-396519-B |
| titleOfInvention | Process for shallow trench isolation |
| abstract | A process for shallow trench isolation is provided, which utilizes the two large side of active area to form a trench wall, thus we can get larger oxide layer at two sides above said trench. And there will be no void formed in the process removing pad oxide, thus spike will not be produced. Therefore, gate oxide abnormal and electric field concentrating effect will not occur, which would induce sub-threshold leakage current. |
| priorityDate | 1998-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.