http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-396416-B

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdfbe6f33fb987343cdde69c2e1ec58d
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
filingDate 1998-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2000-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81e1698de46bce92df49f56a8ad96e60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d056fbb5b84c459a6994833967df161b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3d6de9bb6823c12a46b6454b0364bf2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b07f144a836e62d9e86e2bc44cf3a4a
publicationDate 2000-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-396416-B
titleOfInvention Improved gate-contact structure to prevent contact metal penetration through gate layer without affecting breakdown voltage
abstract This is a power transistor that is deposited on a substrate. The power transistor includes a core cell area, which has multiple power transistor cells each with a drain and a source. Each of the power transistor cells has a polycrystalline silicon gate formed on the substrate as part of a polycrystalline silicon gate layer overlaying the substrate. The polycrystalline silicon gate layer includes multiple polycrystalline gate-layer-extension lengthening to gate contact areas to form gate contacts with a disposed contact metal. The power transistor also includes multiple contact-metal-resistant pad; each pad includes a thick oxide pad disposed below the gate contact areas underneath the polycrystalline gate layer extension. The contact-metal resistant pads resists the contact metal from penetrating through and the substrate shortages.
priorityDate 1998-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359464
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419555779
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23940
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419577462

Total number of triples: 18.