http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-393644-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M3-071 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M1-009 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M3-073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02M3-07 |
| filingDate | 1998-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c0b278a13ae31c8e36dedd6ac2880b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91d5bbaa9d5b9c7e39fe752b77ba0c1a |
| publicationDate | 2000-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-393644-B |
| titleOfInvention | Charge pump circuit capable of generating positive and negative voltages and nonvolatile semiconductor memory device comprising the same |
| abstract | This invention offers the manufacturing process for the flash memory without major modification. The goal is to reduce the occupied area in a chip by using a plural of performance-improved diodes to construct a charge pump circuit to generate the positive and negative potentials. The fixed potentials for the output negative voltage (VN), and the output nodes (Noutn, Noutp) of the positive voltage (VPS), when not used, are supplied by each of the reset circuits (52,70). When the negative voltage is generated, the switches (SW1,SW3) are on; when the positive voltage is generated, the switches (SW1,SW4) are on. The basic potential of each generating potential is supplied to the internal nodes (N10,N20) through the switches (SW1,SW3), the manufacturing method can offer a charge pump circuit generating positive and negative voltages by using a plural of diodes in the voltage generating section (53) without major modification. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I726670-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7598795-B2 |
| priorityDate | 1998-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.