| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T279-23 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B25B11-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6833 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23Q3-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02N13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B25B11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 |
| filingDate |
1998-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2000-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6815ade007d03656caf5542a3cbbf611
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f49a383cd6197710acf8aa7206789ac2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3deadb15136aa76fc7d427c0d2a67ea6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b82c70a4091a1237b266d8e0276e6d9a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f144ee53b498e6ca73de91cc555cb479 |
| publicationDate |
2000-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-392277-B |
| titleOfInvention |
Electrostatic holding apparatus |
| abstract |
There is disclosed an electrostatic holding apparatus in which a voltage is applied to an conductive electrode covered with an insulating dielectric layer in order to cause the insulating dielectric layer to electrostatically attract an object. The main component of the insulating dielectric layer is ceramic containing 0.1 -30 wt.% of an atomic metal, and the volume resistivity of the metal-containing ceramic at 20 DEG C is 10<8> - 10<13> <OMEGA> cm. The metallic element is Mo or W. In the electrostatic holding apparatus, since the volume resistivity of an insulating dielectric layer of an electrostatic attraction portion is decreased, a strong electrostatic force can be generated. Also, there can be maintained the capability of allowing removal of an object at the time of stopping application of voltage. Further, since neither fine cracks nor pores remain in the insulating dielectric layer after sintering, the withstand voltage is high. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I773497-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7042697-B2 |
| priorityDate |
1997-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |