| abstract |
The forming method of the projecting electrode, which has a process for melting the tip part of wire and forming a ball, a process for arranging the ball on the electrode of the semiconductor element through metallic foil and a process for depressing the ball on the electrode and jointing the electrode, metallic foil and the ball, and a wire-bonding method are provided. The ultrasonic junction apparatus, which has a station for carrying a semiconductor wafer, a wire for supplying and supporting metallic foil, and a junction head moving both horizontally and vertically is provided. |