http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-388103-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1998-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b1b76eec4d43189d4dd6703b04536b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01672ecbc5f005e1b103a6510d3b95e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae7f50758acf73226c231b61c2b505c6 |
| publicationDate | 2000-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-388103-B |
| titleOfInvention | Method of forming field oxide layer with double sidewall layer |
| abstract | A method of forming a field oxide layer with a double sidewall layer, comprising the following steps: forming a mask layer on a semiconductor substrate; selectively removing the mask layer to define an active region and forming an opening exposing the surface of the semiconductor substrate as the isolation region; etching the semiconductor substrate in the isolation region to a specified depth to form a groove, and sequentially forming a conductive layer and an insulation layer on the semiconductor substrate and the surface of the mask layer; etching back the insulation layer and the conductive layer to form a conductive sidewall layer and an insulation sidewall layer on the side of the mask layer; performing a thermal oxidation growing process to form a field oxide layer on the semiconductor layer in the isolation region, and growing the conductive sidewall layer into an oxide sidewall layer; and removing the mask layer, the insulation sidewall layer and the oxide sidewall layer, thereby avoiding the difficulty of removing the tips and further preventing the active region from being damaged by stress. |
| priorityDate | 1998-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.