http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-387140-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 1995-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7d18760945203a3e837ad1e2f99d1d5 |
| publicationDate | 2000-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-387140-B |
| titleOfInvention | A manufacturing method for high density stacked capacitor |
| abstract | The invention is a manufacturing method for the capacitor of a stack dynamic random access memory: Stack DRAM. After the insulator is planarized using the chemical mechanical polishing: CMP, we can etch back the polysilicon directly without producing the polysilicon stringer. Therefore, it can form the cavity structure without adding the lithography mask. The high density stacked capacitor can be applied to the 64MB Stack DRAM. |
| priorityDate | 1995-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.