http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-387111-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7ef01e33058cf740cf2197991be97af1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1998-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e104a82249e243384538f7f7ed04b5a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4b805960cec42d06463ce1068b27df9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_944c3e84d3f94fc9a321e240e8fd2656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_667c7c7ca124f3abb929a866982d62fc |
| publicationDate | 2000-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-387111-B |
| titleOfInvention | Dry etching method |
| abstract | The reacted plasma is formed by mixing the iodine hydrogen iodide gas with at least one of the gas selected from either the group consist of fluorine and its compound or the group consist of nitrogen and its compound. This plasma is used for the dry etching of the exposed metal oxide without photo-sculpturing glue film covered. The photo-sculpturing glue film is then exposed to the oxygen plasma. The residual of the photo-sculpturing glue film is etched and removed by using the plasma composed of the oxygen gas and at least one of the gas selected from either the group consist of fluorine and its compound or the group consist of nitrogen and its compound. In the case, the satisfied ranges of flow rate are defined for the gases that includes the fluorine and its compound group, the nitrogen and its compound group, iodine hydrogen gas and oxygen. |
| priorityDate | 1997-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 79.