http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-386297-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8dfdde00a167036f3bfbd1afcbef4a76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate | 1998-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8634d1d287505b461bb1eca7cabe3fd4 |
| publicationDate | 2000-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-386297-B |
| titleOfInvention | Method for forming metal plug |
| abstract | A method for forming a metal plug by adjusting and altering parameters in the manufacturing process so that titanium nitride as a glue layer of tungsten plug is formed by making chemical vapor deposition (CVD) several times, and performing nitrogen/hydrogen plasma treatment after every deposition process. The method makes the structure of titanium nitride denser. The recipe of tungsten etching back is controlling the electrode temperature about 20 to 30 DEG C in order to reduce the volatility of the by-product of titanium tetrafluoride and titanium trifluoride, and slow down the etching rate of CVD titanium nitride. Therefore, the glue layer, titanium nitride, is considered as an etching stop layer for preventing the plug from being etched by the etchant, further decreasing the depression in plug. |
| priorityDate | 1998-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.