http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-382750-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3127 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 |
| filingDate | 1998-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65e78fc0aa2de2a72fa17a5da3a592a5 |
| publicationDate | 2000-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-382750-B |
| titleOfInvention | Plasma film forming method |
| abstract | In a case where a CF film is used as an interlayer insulator film for a semiconductor device when a wiring of W (tungsten) is formed, the CF film is heated to a temperature of, e.g., about 400 to 450 DEG C. At this time a F gas is emitted from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. As thin film deposition gases, C5F8 gas having an annular structure and a hydrocarbon gas, e.g., C2H4 gas, are used. These gases are activated as plasma at a pressure of, e.g., 0.1 Torr, to deposit a CF film on a semiconductor wafer at a process temperature of 400 DEG C using active species thereof. The decomposition products of C5F8 gas may be C5F8, C4F6, C3F4 and so forth which have double bonds, and the recombined materials thereof have a steric structure and strong bonds, which are difficult to be cut even at a high temperature, so that the degassing quantity is small. Alternatively, C6F6 gas having an annular structure is used as a thin film deposition gas, and activated as plasma at a pressure of, e.g., 0.06 Pa, to deposit a CF film on a semiconductor wafer at a process temperature of 400 DEG C using active species thereof. The decomposition products of C6F6 gas may be C6F6, C5F3, C3F3 and so forth which have double bonds, and the recombined materials thereof have a steric structure and strong bonds, which are difficult to be cut even at a high temperature, so that the degassing quantity is small. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I480920-B |
| priorityDate | 1997-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.