http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-379446-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 1998-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_506c189b8955c1062617cdd37153866b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d1f90cb7b1d361add0c9a6d570615a3 |
| publicationDate | 2000-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-379446-B |
| titleOfInvention | Method of manufacturing embedded DRAMs |
| abstract | The present invention provides the method of manufacturing embedded DRAMs by making the surface of the memory circuit region and the surface of the logic circuit region at the same height, increasing thus the planarization of the IC. The invention provides a manufacturing process by leaving in the contact vent of height-length-width ratio fusion resistant metal oxide and using hydrogen plasma for processing or hydrogen heat treatment for changing the fusion resistant metal oxide remaining in the contact vent of the conductivity from nonconductor to conductor. Thus, the fusion resistant metal oxide left in the height-length-width contact vent can be partly selected by using hydrogen plasma treatment or hydrogen heat treatment. The treated part of the fusion resistant metal oxide is converted into conductor as contact connection and the untreated part of fusion resistant metal oxide shall remain as insulator for the dielectric layer of the DRAM capacitor. |
| priorityDate | 1998-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.