http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-367585-B

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filingDate 1997-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1999-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe0bb2f273cca1ebb1579216f1e6288c
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publicationDate 1999-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-367585-B
titleOfInvention Method for completely removing the titanium nitride residuals outside the integrated circuit contacts
abstract A kind of method for completely removing the titanium nitride residuals outside the integrated circuit contacts which includes the following steps: first, forming an insulation layer on semiconductor substrate; etching the insulation to form contacts; then, forming the titanium nitride barrier and tungsten inside the contacts and on the surface of insulation layer; applying two chemical mechanical polishing to remove the tungsten and titanium nitride barrier exposed outside the contacts; at last, employing the mixed gas plasma of Cl2/HCl for dry-etching to completed remove any titanium nitride residuals outside the contacts.
priorityDate 1997-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.