| abstract |
A method of forming a CVD-Ti film includes the steps of loading a Si wafer into a chamber, setting an interior of the chamber at a predetermined reduced-pressure atmosphere, introducing TiCl4 gas, H2 gas, and Ar gas into the chamber, and generating a plasma of the introduced gas in the chamber to form a Ti film in a hole formed in an SiO2 film on the wafer. A wafer temperature is set to 400 degree to 800 degree, a supplied power is set to 100W to 300W, an internal chamber pressure is set to 0.5 Torr to 3.0 Torr, a flow rate ratio of TiCl4 gas to a sum of H2 gas and Ar gas is 1:100 to 1: 300, and a flow rate ratio of H2 gas to Ar gas is 1:1 to 2:1. |