http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-323402-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 1995-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1997-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dc5852e43b4ebc709dba036a78662ae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5345101f210169f239665bec53399951 |
| publicationDate | 1997-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-323402-B |
| titleOfInvention | Manufacturing method of field oxide local channel stop implant |
| abstract | A manufacturing method of field oxide local channel stop implant, which is applicable to one semiconductor substrate, comprises of the following steps: (1) Forming multiple barriers above the semiconductor substrate; (2) Forming multiple field oxides on the semiconductor surface which is not covered by the barrier; (3) Forming spacer on the barrier sidewall; (4) Forming one mask to cover the above objects, only exposing channel stop implant region; (5) Performing one ion implant procedure, forming channel stop diffusion region on the semiconductor substrate of the channel stop implant region; (6) Removing the mask; (7) Filling the trench. |
| priorityDate | 1995-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.