http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-322588-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_185c6617c2ff9160c5b8bf2a9bbc4d0b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-00 |
| filingDate | 1996-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1997-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f29d9f06b9a69d6f5fe6be697e76985 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_328a71871b100194196cbee182d4aec0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_447409e8f44d2da3bd4fc4442ec8e346 |
| publicationDate | 1997-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-322588-B |
| titleOfInvention | Method of monitoring high-current ion implantation machine stability |
| abstract | A method of monitoring high-current ion implantation machine stability comprises: (1) on bare P silicon wafer, applying phosphorus ion implantation with energy 40 Kev, dose 8E14/cm2; (2) in 950 centigrade high temperature performing rapid thermal processing about 10 sec; (3) measuring silicon wafer sheet resistance to check if it is in the range of 100 plus/minus 6 ohm/square, then finishing process of monitoring high-current ion implantation machine stability. |
| priorityDate | 1996-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.