http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-320760-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-70 |
| filingDate | 1996-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1997-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_244ec9ef9ac15414a37eabe9f959967b |
| publicationDate | 1997-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-320760-B |
| titleOfInvention | Manufacturing method of integrated circuit stack capacitor with deep trench |
| abstract | A forming method of polysilicon structure comprises: (1) on semiconductor wafer forming dielectric needed by isolating electricity; (2) by lithography and etch technology etching the above first dielectric to expose semiconductor wafer to form hole; (3) depositing one first polysilicon and planarizing the above first polysilicon; (4) depositing one second dielectric; (5) forming photoresist pattern; (6) with the above photoresist pattern as etching mask, by etch technology etching the above second dielectric except the region overlaid by the above photoresist pattern; (7) on two sides of the above photoresist pattern and second dielectric forming non-volatile polymer spacer; (8) with the above photoresist pattern and non-volatile polymer spacer as etching mask, by etch technology etching the above first polysilicon; (9) removing the above photoresist pattern and non-volatile polymer spacer; (10) with the above second dielectric as the above oxidation mask, in oxygen-containing high temperature environment oxidizing the above first polysilicon to form poly-oxide; (11) removing the above second dielectric; (12) with the above poly-oxide as etching mask, by etch technology etching the above first polysilicon to one proper depth; (13) removing the above poly-oxide so as to form trench on the above first polysilicon surface. |
| priorityDate | 1996-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.