http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-307919-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 1996-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1997-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_244ec9ef9ac15414a37eabe9f959967b |
| publicationDate | 1997-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-307919-B |
| titleOfInvention | The manufacturing method of capacitor |
| abstract | A manufacturing method for memory cell of DRAM, it includes following steps:Form field oxide, MOSFET and wordline on semiconductor substrate; Deposit 1st and 2nd insulator, and planarize 1st insulator; Etch 1st and 2nd insulator to form node contact, which is through by storage node of capacitor to do electricity contacting with source of MOSFET;Deposit a 1st doped polysilicon to fill source contact; Form trench, which depth is smaller than thickness of 1st doped polysilicon, on 1st doped polysilicon; Deposit 3rd insulator to fill trench; Form 3rd insulator plug inside the trench; Proceed anisotropic etching back on 1st doped polysilicon to etch partially thickness of 1st doped polysilicon; Deposit a thin 2nd doped polysilicon, and proceed anisotropic etching back on thin 2nd and 1st doped polysilicon till the surface of 2nd insulator and 3rd insulator plug, and form polysilicon spacer on side of 3rd insulator plug; Remove 3rd insulator plug, and consist storage node of capacitor by residual 1st doped polysilicon and polysilicon spacer; Form thin capacitor dielectric and 3rd doped polysilicon on storage node, and etch capacitor dielectric and 3rd doped polysilicon to form plate electrode of capacitor. |
| priorityDate | 1996-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.