http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-307889-B

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
filingDate 1995-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1997-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9866504e4aaa66cfb66fc624471f2353
publicationDate 1997-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-307889-B
titleOfInvention Technique of removing anti-reflecting coating of integrated circuit
abstract A technique of removing anti-reflecting coating of integrated circuit comprises of: (1) forming first level metal interconnection pattern, which is constituted by composed layer consisting of Ti, TiN(I), TiW, TiN(II) etc.; (2) forming spin-on-glass(SOG); (3) by plasma etch technology performing etchback to the above SOG, in which the above etchback stops on anti-reflecting coating constituted by TiN(II) on Al metal; (4) by plasma etch technology selectively etching anti-reflecting coating constituted by TiN(II) on the above Al metal.
priorityDate 1995-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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