http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-306063-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 1996-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1997-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b179afe2d6a0c5ca67b3b9555ea2a74 |
| publicationDate | 1997-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-306063-B |
| titleOfInvention | Semiconductor memory device with capacitor (part 2) |
| abstract | A semiconductor memory device with capacitor, in which the semiconductor memory device includes one substrate, one transfer transistor formed on the substrate, and one storage capacitor electrically coupled to one of drain and source region of the transfer transistor, comprises of the following steps: (1) on the substrate forming one first insulator, overlaying the transfer transistor; (2) forming one pillar conductive layer, passing at least the first insulator, electrically coupled with one of the drain and source region of the transfer transistor; (3) on the pillar conductive layer surface and the first insulator, forming one first conductive layer; (4) removing the first conductive layer part located above the pillar conductive layer; (5) forming one second conductive layer, electrically coupled to the pillar conductive layer, and the first conductive layer; (6) patterning the first and second conductive layer to form one storage electrode of the storage capacitor, in which the storage electrode includes the first and second conductive layer, and pillar conductive layer; (7) on exposed surface of the first and second conductive layer, forming one dielectric layer; (8) on surface of the dielectric, forming one third conductive layer to constitute one opposed electrode of the storage capacitor. |
| priorityDate | 1996-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.