http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-304305-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f9b35e8cb520f0da0cdac8be257bdc21 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_842df9c85ba374f3296f425ce9ce1e15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_55a5157a290e74b6cfc85b6aeb8f1b13 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-13 |
filingDate | 1995-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1997-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5274aa4cb0d908467d110ce57e9d6071 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_547cd9a487dd92cf72feeead413591da http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89fbd9a8c55e04ad70c5d9df2f7a742b |
publicationDate | 1997-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-304305-B |
titleOfInvention | The process of vertical bottom gate polysilicon thin film transistors |
abstract | A process of vertical bottom gate polysilicon thin film transistors with following steps: Provide a SiO2 insulated layer; Deposit polysilicon on SiO2 insulated layer as bottom gate; Etch both sides of bottom gate polysilicon down to SiO2 insulated layer; Deposit a TEOS layer on top surface and side wall of bottom gate polysilicon as gate dielectric; Deposit a non-doped polysilicon layer on bottom gate polysilicon and SiO2 insulated layer as source, drain, offset and active channel; Deposit a pad oxide, and form drain on both ends of bottom gate and form source on top end of polysilicon by ion implantation; Deposit an insulated layer and etch the position of contact window; Deposit a metal Al layer and etch metal contact window; Hydrogenated the product in 300 deg.C H2 plasma. |
priorityDate | 1995-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.