http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-302514-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 |
| filingDate | 1996-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1997-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b3e45b6ffddd86b9de5c138d811b414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff4d8854f9f2e563eab7dd75ceeb3bd5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_172f63271b5ff057609cc0b554a78ba9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d376553b188d2fa5e2b7d463c4ca4098 |
| publicationDate | 1997-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-302514-B |
| titleOfInvention | Eliminating method of thin-film interface delamination of IC |
| abstract | An eliminating method of thin-film interface delamination of IC comprises of:(1) on silicon semiconductor substrate forming gate oxide of metal oxide semiconductor field effect transistor(MOSFET); (2) on silicon semiconductor substrate forming MOSFET gate; (3) performing fluorine ion implantation to form P- lightly doped region; (4) on lateral side of the above gate forming spacer; (5) performing fluorine ion implantation to form P+ heavily doped region. |
| priorityDate | 1996-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.