http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-298677-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 1995-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1997-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_244ec9ef9ac15414a37eabe9f959967b |
| publicationDate | 1997-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-298677-B |
| titleOfInvention | Fabrication method of cup-shaped capacitors for DRAM |
| abstract | A fabrication method of cup-shaped capacitors for DRAM includes thefollowing steps: 1. Form the field oxide for isolated active area, MOSFET, and wordline on the substrate. 2. Deposit the first and the second isolated layers and flat the second one. Determine the photoresist pattern for the source contact node by using the lithography technique and etch the second isolation layer with part of its thickness to form the arc structure on the second isolation layer.3. Removing the first and the second isolation layers to form the cup-shaped node contact of the MOSFET by using the anisotropic etching technology. The storage node of the capacitor will contact to the MOSFET through the cup-shaped node contact. 4. Deposit the first doped polysilicide layer to fill all the node contacts.5. Remove the first polysilicide layer and the second isolation layer to expose the first polysilicon plug inside the cup-shaped node contact.6. Form a capacitor dielectric layer and the second doped polysilicide layer on the first polysilicon plug; then remove the above capacitor dielectric layer and the second doped polysilicide layer to form the plate electrode of the capacitor by using the lithography and plasma etching technologies. |
| priorityDate | 1995-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.