http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-297926-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
filingDate | 1996-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1997-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_244ec9ef9ac15414a37eabe9f959967b |
publicationDate | 1997-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-297926-B |
titleOfInvention | The manufacturing method for metal conductor line |
abstract | A manufacturing method for metal conductor line of IC. It includes following steps: - Form electric device with conductive region on semiconductor wafer; - Form 1st dielectric then planarization it; - Etch 1st dielectric to form hole by lithography & etching technology; - Form barrier metal and stride over the hole for electric contacting with conductive region; - Form 1st metal layer on barrier metal; - Proceed etch back on 1st metal layer; - Form 2nd metal layer; - Form pattern on 2nd metal layer, remaining 1st metal layer and barrier metal layer. |
priorityDate | 1996-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.