http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-297926-B

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
filingDate 1996-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1997-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_244ec9ef9ac15414a37eabe9f959967b
publicationDate 1997-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-297926-B
titleOfInvention The manufacturing method for metal conductor line
abstract A manufacturing method for metal conductor line of IC. It includes following steps: - Form electric device with conductive region on semiconductor wafer; - Form 1st dielectric then planarization it; - Etch 1st dielectric to form hole by lithography & etching technology; - Form barrier metal and stride over the hole for electric contacting with conductive region; - Form 1st metal layer on barrier metal; - Proceed etch back on 1st metal layer; - Form 2nd metal layer; - Form pattern on 2nd metal layer, remaining 1st metal layer and barrier metal layer.
priorityDate 1996-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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