http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-278230-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_628db03ba4f8948ecd211fb3d46b9ef4 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 1995-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1996-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b68e86e55787976ad6de9c31cf04da2d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a74da8c29ad90ea61a6299eed9a9278 |
| publicationDate | 1996-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-278230-B |
| titleOfInvention | Inhibition method of boron spiking effect in P polysilicon implanted by BF2 |
| abstract | An inhibition method of boron spiking effect in P polysilicon implanted by boron fluoride by inductively coupled nitrogen plasma comprises the steps of: from chip to oxide growth of next step with the same steps as double gate CMOS's; after cleaning silicon chip sending it into furnace, then growing 50-120 A oxide by feeding O2 under 900-1000 Celsius; sending chip into ICP system, then feeding N2 with 100-300W power and 1-30 min. period; overlapping one or more polysilicon layer with 1000-3000 A; performing ion implantation BF2 with energy 30-70Kev and implantation quantum 1x10 15 - 1x10 16 atom/cm2; cleaning the chip one more time; sending chip into furnace with feeded N2 or O2, then annealing 10-30 min. under 800-1000 Celsius; the remaining step same as double gate CMOS's; By the above method generating one nitride layer between oxide and polysilicon to form barrier that is not easy to punchthrough by boron ion. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0824268-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0926710-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6399445-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0847079-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0926710-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0847079-A3 |
| priorityDate | 1995-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.