http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-212853-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
filingDate | 1993-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1993-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e641126492130574f76d1001cf7d7ffe |
publicationDate | 1993-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-212853-B |
titleOfInvention | High coupling ratio flash memory and erasable memory |
abstract | The method to manufacture high coupling ratio flash memory and erasable memory, comprises: - Step of proceeding a first polysilicon deposition/doping on a field oxide layer and thin conducting oxide layer, - Step of covering a photomask and etching nitric silicon to break the neighbor nitric silicon with each other, - Depositing a second polysilicon layer which is twice as thick as the first polysilicon layer, and proceeding the doping operation, - Etching the second polysilicon layer and forming a self-aligned protuding spacer for the first polysilicon layer, - Step of removing the nitric silicon on the first polysilicon layer, - Step of forming dielectric on the nitric silicon, - Step of depositing/doping a third polysilicon layer. By the method, the spacer constituted by the first and second polysilicon layers establishes an inter-layer gate with large surface and forms a large coupling capacitance with the control gate constituted by the third polysilicon layer to provide the high coupling ratio. |
priorityDate | 1993-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.