http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202222813-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_11d738aa9b5b691f2f5094e7b819ac93
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-0617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F9-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
filingDate 2020-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a647c9a06be9c32b7f7cd59b809f731d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8b8b2cf39a57cde2fc9b13217dd6afe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afbef855401a1346e44a406caaede6cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9483d8500e1b2e28312965d6fd8a1eff
publicationDate 2022-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-202222813-A
titleOfInvention New Group V and VI Transition metal precursors for thin film deposition
abstract Described herein are Group V and VI compounds used as precursors for depositing Group V and VI-containing films. Ligands with alkyl, amide, imide, amidinate groups and/or cyclopentadienyl (Cp) ligands are used to form Group V and VI complexes used as precursors. Examples of Group V and VI precursor compounds include, but are not limited to, Cp amide imide alkyl vanadium compounds, Cp amide imide alkylamide vanadium compounds, Cp amide imide alkoxide vanadium compounds, Cp amide imide amidinate vanadium compounds, and alkylimide vanadium trichloride compounds. The Group V and VI precursors are used for deposition on substrate surfaces with superior film properties such as uniformity, continuity, and low resistance. Examples of substrate surfaces for deposition of metal-containing films include, but are not limited to metals, metal oxides, and metal nitrides.
priorityDate 2019-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID456370357
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6547
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6432707
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449460707
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414859283

Total number of triples: 30.