http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202214661-A

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filingDate 2021-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba683dd6867ce2bc8d3c84e3c368d704
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publicationDate 2022-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-202214661-A
titleOfInvention Organometallic precursor, extreme ultraviolet photoresist precursor, and method for processing photoresist layer
abstract An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes a chemical formula of MaXbLc, where M is a metal, X is a multidentate aromatic ligand that includes a pyrrole-like nitrogen and a pyridine-like nitrogen, L is an extreme ultraviolet (EUV) cleavable ligand, a is between 1 and 2, b is equal to or greater than 1, and c is equal to or greater than 1.
priorityDate 2020-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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