| abstract |
Embodiments of a 3D memory device and related fabrication method are disclosed. The method for fabricating the 3D memory device includes sequentially forming a sacrificial layer disposed on a substrate, an N-type doped semiconductor layer disposed on the sacrificial layer, and a dielectric stack disposed on the N-type doped semiconductor layer, forming a channel structure extending vertically to pass through the dielectric stack and the N-type semiconductor layer, replacing the dielectric stack with a storage stack such that the channel structure extends vertically to pass through the storage stack and the N-type doped semiconductor layer, removing the substrate and the sacrificial layer to expose the end portion of the channel structure, and replacing a portion of the channel structure that is adjacent to the N-type doped semiconductor layer with a semiconductor plug. |