http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202143460-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39bf5fb42b779de3124ae36ba1226a72 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14634 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14614 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate | 2020-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_398b84259cc776713432bcd2ee2ec665 |
| publicationDate | 2021-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-202143460-A |
| titleOfInvention | Camera device |
| abstract | An imaging device of one aspect of the present disclosure includes: a pixel area including a pixel transistor, the pixel transistor includes a gate; a first peripheral area includes at least one first peripheral transistor, and is located outside the pixel area, The first peripheral transistor includes a gate electrode; and the semiconductor substrate includes a first substrate portion. The gate length of the at least one first peripheral transistor is shorter than the gate length of the pixel transistor. When at least one impurity that helps suppress the transient enhanced diffusion of conductive impurities is defined as a specific species, the at least one first peripheral transistor includes a first specific layer, and the first specific layer is located in the first specific layer. 1 In the substrate portion, conductive impurities and the aforementioned specific species are contained. |
| priorityDate | 2020-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.