http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202141775-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e555d1b0ddc05eaf8786f6bd134bda16 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1463 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate | 2021-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce60dacf822c6dbba121b332268229ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c600f32f406fc9ed634c1f95b584511 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ce332f20826898b5ce7e3ce0c7577a3 |
| publicationDate | 2021-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-202141775-A |
| titleOfInvention | Semiconductor image sensor |
| abstract | The invention provides a semiconductor image sensor with high sensitivity to near-infrared light and realizing integration in a small area. The semiconductor image sensor of the present invention includes a light receiving element, a silicon substrate formed under the insulating film of the SOI substrate, and formed along a direction perpendicular to the main surface of the silicon substrate, and includes sensitivity to near-infrared light The SOI substrate includes a silicon substrate, an insulating film formed on the silicon substrate, and a semiconductor layer formed on the insulating film; a high-voltage generating circuit is generated to apply a reaction to the pn junction diode The applied voltage to the bias voltage; and the BOX capacitor, with an insulating film interposed, the semiconductor layer as the first electrode, and the diffusion layer formed on the silicon substrate as the second electrode, and the first electrode is connected to the output terminal of the high voltage generating circuit, The impurity concentration of the silicon substrate is in the range of 1×10 12 /cm 3 to 1×10 14 /cm 3 , the film thickness is in the range of 300 μm to 700 μm, and the applied voltage is in the range of 10 V to 60 V. |
| priorityDate | 2020-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 26.