| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4958
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
2021-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad82ecdaadb7a4e1b4f959e550f204f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e704cc51fa844115a0b97bf6a0d7dd0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb419557165f052820c5022c857cb17e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ed9ae7df19faf2b6907d8acb545d0b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_184cccf858b1e0f64b1759dc44dc5598
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dfc17dea3c7964abb8191f6922de844 |
| publicationDate |
2021-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202141632-A |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
A method includes forming a gate trench over a semiconductor fin. The gate trench includes an upper portion surrounded by first gate spacers and a lower portion surrounded by second gate spacers and the first gate spacers. The method includes forming a metal gate in the lower portion of the gate trench. The metal gate is disposed over a first portion of a gate dielectric layer. The method includes depositing a metal material in the gate trench to form a gate electrode overlaying the metal gate in the lower portion of the gate trench, while keeping sidewalls of the first gate spacers and upper surfaces of the second gate spacer overlaid by a second portion of the gate dielectric layer. The method includes removing the second portion of the gate dielectric layer, while remaining the gate electrode substantially intact. |
| priorityDate |
2020-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |