http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202140845-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6635a0116bafd2c08a0c99b78e132e99 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68771 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4558 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45572 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4581 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67103 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4411 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45508 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4586 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68764 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate | 2021-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f092a85a9b69ccbdbee154f2fa725ed8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b017f6635198857be6fbc2dd23bdc91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10d7c63518d993c976ffde46a22c36fe |
| publicationDate | 2021-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-202140845-A |
| titleOfInvention | CVD reactor with dual pre-zone plates |
| abstract | The present invention relates to a device, in which a gas inlet member (5) is provided in the reactor shell (1), a substrate holder defining a process chamber (8) below, and a heating device for heating the substrate holder (2) (6) and the top (7) of the process chamber (7) that defines the process chamber (8) above, wherein the substrate holder (2) forms a substrate support area (S) for accommodating the substrate (4) to be coated, and A front area plate (10) is provided in the area between the gas inlet member (5) and the substrate support area (S) of the substrate holder (2), so that the top side (2') of the substrate holder (2) A free space (12, 13) is left between the bottom side (10') of the front panel (10), and an additional board (11) is arranged in this free space. The present invention also relates to a method for depositing III-V group semiconductor layers. In order to keep the parameters that affect the wavelength of the device within a narrow tolerance range for optoelectronic devices, it is proposed to multiply the pre-zone plates (10, 11) so that the temperature of the pre-zone is 10-40°C lower than the substrate temperature. |
| priorityDate | 2020-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.