http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202133454-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
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filingDate 2020-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e43299c67ca73f65537d4a08fec00e8
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publicationDate 2021-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-202133454-A
titleOfInvention Semiconductor device
abstract The present invention relates to semiconductor devices and semiconductor systems. The present invention provides a semiconductor device that is particularly useful for power devices and has excellent semiconductor characteristics. The semiconductor device includes: a crystalline oxide semiconductor layer; and at least one electrode electrically connected to the crystalline oxide semiconductor layer, having at least one trench on a first surface of the crystalline oxide semiconductor layer, the trench The groove includes a bottom surface, a side surface, and at least one arc portion between the bottom surface and the side surface, the radius of curvature of the arc portion is in the range of 100 nm to 500 nm, and the side surface and the crystalline oxide semiconductor layer The angle formed by the first surface is 90° or more.
priorityDate 2019-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.