| abstract |
The subject of the present invention is to provide a polishing composition that eliminates the bumps in the peripheral portion of a laser mark in the polishing step of a wafer, a method of manufacturing the same, and a polishing method using the polishing composition. The solution is a polishing composition, which is a polishing composition containing silicon dioxide particles and water, and is characterized in that the polishing composition further contains 0.400 to 0.400 to SiO 2 relative to the silicon dioxide particles. 1.500: 1 the mass ratio of tetraalkylammonium ions, and containing the particles to SiO 2 in terms of silicon dioxide is from 0.100 to 1.500: 1 was dissolved in the mass of the polishing composition ratio of SiO 2. The aforementioned tetraalkylammonium ion is derived from a compound selected from the group consisting of alkali silicate, hydroxide, carbonate, sulfate, and halide, and contains 0.2% to 8.0% by mass in the aforementioned polishing composition. The ratio of mass%. The aforementioned dissolved SiO 2 is derived from tetraalkylammonium silicate, potassium silicate, sodium silicate, or a mixture of these. |