| abstract |
A metal-dielectric bonding method includes: a first semiconductor structure is provided, wherein the first semiconductor structure includes a first semiconductor layer, a first dielectric layer on the first semiconductor layer, and a first metal layer on the first dielectric layer, wherein the first metal layer has a metal bonding surface opposite to the first semiconductor layer; the metal bonding surface is planarized and treated by plasma; a second semiconductor structure is provided, wherein the second semiconductor structure includes a second semiconductor layer, and a second dielectric layer on the second semiconductor layer, wherein the second dielectric layer has a dielectric bonding surface opposite to the second semiconductor layer; the dielectric bonding surface is planarized and treated by plasma; the first semiconductor structure and the second semiconductor structure are bonded by bonding the metal bonding surface to the dielectric bonding surface. |