http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202124784-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8fe45b6247d47cf1b80432834089e2ec |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-38 |
| filingDate | 2020-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fde40235bc831d5b83f23a6c5138b23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3680fe92f4e9c1c122589fb140c5703 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8a5f1c269867dd7fb54ac2ce5713420 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f7df3e307a8a9c881d752fb72e33b65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_568cbd2d290a782abbc72e5bb50a8eea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a06551ea211ed83ee2f289f6205b6c5f |
| publicationDate | 2021-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-202124784-A |
| titleOfInvention | Copper plating additive for semiconductor and its preparation method and application |
| abstract | The invention relates to the field of electroplating, in particular to a copper plating additive for semiconductors. The raw materials for the additive preparation include at least component A; in terms of quality concentration, the component A includes 10~60g/L polyethylene glycol, 0.01~1g/L copper salt, 1~10g/L inorganic acid and super Pure water. The copper plating additive for semiconductor prepared by the present invention can avoid holes and gaps generated during electroplating on the channel surface with a width of 40~80nm and a depth of 150~250nm, which can effectively improve the filling efficiency of micropores, reduce the working time, and at the same time reduce The thickness of the plating layer; it can increase the copper deposition rate, avoid a large amount of accumulation, and improve the plating efficiency while refining the crystal grain; it can reduce the holes generated during the electroplating of the channel surface, and at the same time avoid local bumps on the surface of the plating layer. The production process is relatively simple, the reaction conditions are normal temperature and pressure, and the three wastes are less discharged during the production process. |
| priorityDate | 2019-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 70.